publications

2026

1. SPIE

   Integration of Thin-Film Lithium Niobate Modulators on a SiN Photonics Platform

   Forrest Valdez, Arif Rahman, Camiel Beeck, and 6 more authors

   In Integrated Photonics Platforms IV, SPIE Photonics Europe, May 2026

   Invited paper. Presented April 14, 2026; proceedings published May 28, 2026.

   DOI Bib HTML

   @inproceedings{valdez2026spie,
     title = {Integration of Thin-Film Lithium Niobate Modulators on a {SiN} Photonics Platform},
     author = {Valdez, Forrest and Rahman, Arif and Op de Beeck, Camiel and Mere, Viphretuo and Zabelich, Boris and Krishnan, Radha and Aashna, Pragati and Mookherjea, Shayan and Wuytens, Pieter},
     booktitle = {Integrated Photonics Platforms IV, SPIE Photonics Europe},
     series = {Proceedings of SPIE},
     volume = {PC14100},
     pages = {PC1410004},
     year = {2026},
     month = may,
     publisher = {SPIE},
     doi = {10.1117/12.3110151},
     note = {Invited paper. Presented April 14, 2026; proceedings published May 28, 2026.}
   }

2. OFC

   High-Efficiency Ring-Assisted Mach–Zehnder Modulator on a Lithium Tantalate-on-Silicon Nitride Platform

   Forrest Valdez, Boris Zabelich, Viphretuo Mere, and 6 more authors

   In Optical Fiber Communication Conference (OFC), Mar 2026

   Paper W1A.6.

   DOI Bib HTML

   @inproceedings{valdez2026ofc,
     title = {High-Efficiency Ring-Assisted Mach--Zehnder Modulator on a Lithium Tantalate-on-Silicon Nitride Platform},
     author = {Valdez, Forrest and Zabelich, Boris and Mere, Viphretuo and Aashna, Pragati and Krishnan, Radha and Op de Beeck, Camiel and Rahman, Arif and Mookherjea, Shayan and Wuytens, Pieter},
     booktitle = {Optical Fiber Communication Conference (OFC)},
     series = {Technical Digest Series},
     pages = {W1A.6},
     year = {2026},
     month = mar,
     publisher = {Optica Publishing Group},
     doi = {10.1364/OFC.2026.W1A.6},
     note = {Paper W1A.6.}
   }

2025

1. JLT

   Integration of Hybrid Thin-Film Lithium Niobate Electro-optic Modulators on a Wafer-scale Silicon Nitride Photonics Platform

   Arif Rahman, Forrest Valdez, Viphretuo Mere, and 3 more authors

   Journal of Lightwave Technology, Dec 2025

   Published online December 2025.

   Abs DOI Bib HTML PDF

   This work achieves the desirable combination of low-pressure chemical vapor deposition silicon nitride (SiN) multi-layer photonic integrated circuits (PICs) with high-performance thin-film lithium niobate electro-optic (EO) modulators, made in a scalable foundry fabrication process using conventional low-resistivity silicon wafers. Operational parameters such as bandwidth, voltage, insertion loss and extinction ratio are reported for representative EO Mach–Zehnder modulator devices. The EO devices are seamlessly connected to low-loss SiN waveguides which have been used for superior performance in a wide range of PIC applications.

   @article{rahman2025hybridlnsin,
     title = {Integration of Hybrid Thin-Film Lithium Niobate Electro-optic Modulators on a Wafer-scale Silicon Nitride Photonics Platform},
     author = {Rahman, Arif and Valdez, Forrest and Mere, Viphretuo and Op de Beeck, Camiel and Wuytens, Pieter and Mookherjea, Shayan},
     journal = {Journal of Lightwave Technology},
     year = {2025},
     pages = {1--11},
     month = dec,
     publisher = {IEEE},
     doi = {10.1109/JLT.2025.3646212},
     url = {https://ieeexplore.ieee.org/document/11304539},
     note = {Published online December 2025.}
   }

2. arXiv

   High-performance Hybrid Lithium Niobate Electro-optic Modulators Integrated with Low-loss Silicon Nitride Waveguides on a Wafer-scale Silicon Photonics Platform

   Arif Rahman, Forrest Valdez, Viphretuo Mere, and 3 more authors

   arXiv preprint arXiv:2504.00311, Apr 2025

   Preprint; the peer-reviewed journal version is listed above.

   Abs DOI Bib HTML PDF

   Heterogeneously-integrated electro-optic modulators (EOM) are demonstrated using the hybrid-mode concept, incorporating thin-film lithium niobate (LN) by bonding with silicon nitride (SiN) passive photonics. At wavelengths near 1550 nm, these EOMs demonstrated greater than 30 dB extinction ratio, 3.8 dB on-chip insertion loss, a low-frequency half-wave voltage-length product (VπL) of 3.8 V.cm, and a 3-dB EO modulation bandwidth exceeding 110 GHz. This work demonstrates the combination of multi-layer low-loss SiN waveguides with high-performance LN EOMs made in a scalable fabrication process using conventional low-resistivity silicon (Si) wafers.

   @article{rahman2025hybridlnsinpreprint,
     title = {High-performance Hybrid Lithium Niobate Electro-optic Modulators Integrated with Low-loss Silicon Nitride Waveguides on a Wafer-scale Silicon Photonics Platform},
     author = {Rahman, Arif and Valdez, Forrest and Mere, Viphretuo and Op de Beeck, Camiel and Wuytens, Pieter and Mookherjea, Shayan},
     journal = {arXiv preprint arXiv:2504.00311},
     year = {2025},
     month = apr,
     pages = {1--14},
     publisher = {arXiv},
     doi = {10.48550/arXiv.2504.00311},
     note = {Preprint; the peer-reviewed journal version is listed above.}
   }